A method is presented for forming fully aligned vias without recessing a plurality of conductive lines. The method includes forming the plurality of conductive lines within an interlayer dielectric (ILD), growing first dielectric regions in direct contact with the plurality of conductive lines, forming a capping layer over the first dielectric regions, depositing an ultra-low-k (ULK) layer over and in direct contact with the capping layer, forming a via over a conductive line of the plurality of conductive lines, and removing an exposed portion of the capping layer and an exposed first dielectric region in direct contact with the conductive line to reveal the conductive line.