Invention Grant
- Patent Title: Reduced static random access memory (SRAM) device foot print through controlled bottom source/drain placement
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Application No.: US16006187Application Date: 2018-06-12
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Publication No.: US10832975B2Publication Date: 2020-11-10
- Inventor: Ruqiang Bao , Brent A. Anderson , Junli Wang , Kangguo Cheng , Choonghyun Lee , Hemanth Jagannathan
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Douglas Pearson
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L27/092 ; H01L29/08 ; H01L29/06 ; H01L29/78 ; H01L21/324 ; H01L21/225 ; H01L29/10 ; H01L27/11
Abstract:
A method of reducing the distance between co-linear vertical fin field effect devices is provided. The method includes forming a first vertical fin on a substrate, forming a second vertical fin on the substrate, and depositing a masking block in the gap between the first vertical fin and second vertical fin. The method further includes depositing a spacer layer on the substrate, masking block, first vertical fin, and second vertical fin, depositing a protective liner on the spacer layer, and removing a portion of the protective liner from the spacer layer on the masking block and substrate adjacent to the first vertical fin. The method further includes removing a portion of the spacer layer from a portion the masking block and a portion of the substrate adjacent to the first vertical fin, and growing a first source/drain layer on an exposed portion of the substrate and first vertical fin.
Public/Granted literature
Information query
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