An optoelectronic semiconductor component includes a semiconductor layer sequence that generates radiation, the semiconductor layer sequence has an emission side and a rear side opposite said emission side, a mirror for the generated radiation on the rear side, a carrier that is transmissive to the radiation generated, on the emission side, and a reflector housing on side surfaces of the carrier, the reflector housing is impermeable to the generated radiation and configured for diffuse reflection of generated radiation and includes a radiation exit opening, wherein at least one of a width of an opening in the reflector housing and an area of the radiation exit opening decrease(s) in a direction away from the emission side, and a maximum emission of the generated radiation takes place in an emission angle range of 30° to 60°, relative to a perpendicular to the emission side.