- Patent Title: Memory access module for performing a plurality of sensing operations to generate digital values of a storage cell in order to perform decoding of the storage cell
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Application No.: US16656533Application Date: 2019-10-17
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Publication No.: US10854285B2Publication Date: 2020-12-01
- Inventor: Tsung-Chieh Yang , Hsiao-Te Chang , Wen-Long Wang
- Applicant: Silicon Motion Inc.
- Applicant Address: TW Hsinchu County
- Assignee: Silicon Motion, Inc.
- Current Assignee: Silicon Motion, Inc.
- Current Assignee Address: TW Hsinchu County
- Agent Winston Hsu
- Main IPC: G11C11/56
- IPC: G11C11/56 ; G11C16/26 ; G06F3/06 ; G11C16/08
Abstract:
A method for performing memory access includes: performing a first sensing operation corresponding to a first sensing voltage and performing at least a second sensing operation corresponding to a second sensing voltage to respectively generate a first digital value of a Flash cell of a Flash memory and a second digital value of the Flash cell of the Flash memory; using the first digital value, the second digital value, and charge distribution statistics information of the Flash memory to obtain soft information of a bit stored in the Flash cell, wherein the soft information corresponds to a threshold voltage of the Flash cell; and using the soft information to perform soft decoding.
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