- Patent Title: Radio frequency (RF) pulsing impedance tuning with multiplier mode
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Application No.: US16117457Application Date: 2018-08-30
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Publication No.: US10854427B2Publication Date: 2020-12-01
- Inventor: Katsumasa Kawasaki , Justin Phi , Kartik Ramaswamy , Sergio Fukuda Shoji , Daisuke Shimizu
- Applicant: APPLIED MATERIALS, INC.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Moser Taboada
- Agent Alan Taboada
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H01L21/3065

Abstract:
Methods for RF pulse reflection reduction are provided herein. In some embodiments, a method for processing a substrate in a plasma enhanced substrate processing system using multi-level pulsed RF power includes; receiving a process recipe for processing the substrate that includes a plurality of pulsed RF power waveforms from a plurality of RF generators, using the master RF generator to generate a transistor-transistor logic (TTL) signal having a base frequency and a first duty cycle, setting a multiplier for each RF generator, dividing the first duty cycle into a high level interval and a low level interval, determining a frequency command set for each RF generator and sending the frequency command set to each RF generator, wherein the frequency command set includes a frequency set point for each RF generator; and providing the plurality of pulsed RF power waveforms from the plurality of RF generators to a process chamber.
Public/Granted literature
- US20200075290A1 RADIO FREQUENCY (RF) PULSING IMPEDANCE TUNING WITH MULTIPLIER MODE Public/Granted day:2020-03-05
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