公开(公告)号：US12080519B2

公开(公告)日：2024-09-03

申请号：US17843830

申请日：2022-06-17

Applicant: Applied Materials, Inc.

Inventor： Jie Yu ,  Yue Guo ,  Kartik Ramaswamy ,  Tao Zhang ,  Shahid Rauf ,  John Forster ,  Sidharth Bhatia ,  Rong Gang Zheng

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32926

Abstract: Embodiments disclosed herein include a dynamic load simulator. In an embodiment, the dynamic load simulator comprises an impedance load, a reverse match network, and a smart RF controller. In an embodiment, the smart RF controller comprises a dynamic load generator, and a reverse match controller.

公开(公告)号：US12046449B2

公开(公告)日：2024-07-23

申请号：US17726930

申请日：2022-04-22

Applicant: Applied Materials, Inc.

Inventor： Yue Guo ,  Katsumasa Kawasaki ,  Kartik Ramaswamy ,  Yang Yang ,  Nicolas John Bright

IPC: H01J37/32 ,  H03H7/38

CPC classification number: H01J37/32146 ,  H01J37/32183 ,  H01J37/32935 ,  H03H7/38 ,  H01J2237/24564 ,  H01J2237/334

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a matching network configured for use with a plasma processing chamber comprises an input configured to receive one or more radio frequency (RF) signals, an output configured to deliver the one or more RF signals to a processing chamber, a first sensor operably connected to the input and a second sensor operably connected to the output and configured to measure impedance during operation, at least one variable capacitor connected to the first sensor and the second sensor and a controller, based on a measured impedance, configured to tune the at least one variable capacitor of the matching network to a first target position based on weighted output impedance values measured at pulse states of a voltage waveform and to tune the at least one variable capacitor to a second target position based on weighted input impedance values measured at the pulse states of the voltage waveform.

公开(公告)号：US20230175123A1

公开(公告)日：2023-06-08

申请号：US18051321

申请日：2022-10-31

Applicant: APPLIED MATERIALS, INC.

Inventor： James D. Carducci ,  Kenneth S. Collins ,  Kartik Ramaswamy

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/458

CPC classification number: C23C16/4401 ,  C23C16/4412 ,  C23C16/45565 ,  C23C16/4585 ,  C23C16/4586

Abstract: Certain embodiments of the present disclosure relate to chamber liners, processing chambers that include chamber liners, and methods of using the same. In one embodiment, a method of operating a processing chamber includes causing a chamber liner within the processing chamber to move to a loading position to allow a substrate to be inserted through an access port of the processing chamber into an interior volume of the processing chamber. The method further includes causing the chamber liner to move to an operation position that blocks the access port after the substrate has been inserted into the interior volume. The method further includes generating a plasma using a cathode assembly.

公开(公告)号：US11603591B2

公开(公告)日：2023-03-14

申请号：US16982955

申请日：2018-10-16

Applicant: Applied Materials, Inc.

Inventor： Eswaranand Venkatasubramanian ,  Yang Yang ,  Pramit Manna ,  Kartik Ramaswamy ,  Takehito Koshizawa ,  Abhijit B. Mallick

IPC: C23C16/26 ,  C23C16/503 ,  C23C16/455 ,  C23C16/458 ,  C23C16/505 ,  C23C16/52 ,  H01L21/02

Abstract: Methods for depositing an amorphous carbon layer onto a substrate, including over previously formed layers on the substrate, use a plasma-enhanced chemical vapor deposition (PECVD) process. In particular, the methods utilize a combination of RF AC power and pulsed DC power to create a plasma which deposits an amorphous carbon layer with a high ratio of sp3 (diamond-like) carbon to sp2 (graphite-like) carbon. The methods also provide for lower processing pressures, lower processing temperatures, and higher processing powers, each of which, alone or in combination, may further increase the relative fraction of sp3 carbon in the deposited amorphous carbon layer. As a result of the higher sp3 carbon fraction, the methods provide amorphous carbon layers having improved density, rigidity, etch selectivity, and film stress as compared to amorphous carbon layers deposited by conventional methods.

公开(公告)号：US20230060529A1

公开(公告)日：2023-03-02

申请号：US17874929

申请日：2022-07-27

Applicant: Applied Materials, Inc.

Inventor： Mehran Moalem ,  Kartik Ramaswamy

IPC: H01J37/32

Abstract: Embodiments disclosed herein include a plasma source. In an embodiment, the plasma source includes a plurality of plasma legs connected to each other by corner connectors. In an embodiment, each plasma leg comprises a conductive shell, a magnetic layer around the conductive shell, and a primary coil in the magnetic layer.

公开(公告)号：US11462389B2

公开(公告)日：2022-10-04

申请号：US17315259

申请日：2021-05-07

Applicant: Applied Materials, Inc.

Inventor： Leonid Dorf ,  Rajinder Dhindsa ,  James Rogers ,  Daniel Sang Byun ,  Evgeny Kamenetskiy ,  Yue Guo ,  Kartik Ramaswamy ,  Valentin N. Todorow ,  Olivier Luere ,  Jonathan Kolbeck ,  Linying Cui

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/683

Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.

公开(公告)号：US11462386B2

公开(公告)日：2022-10-04

申请号：US16716965

申请日：2019-12-17

Applicant: Applied Materials, Inc.

Inventor： Kartik Ramaswamy ,  Yang Yang ,  Manivannan Thothadri ,  Chien-An Chen ,  Ludovic Godet ,  Rutger Meyer Timmerman Thijssen

IPC: H01J37/305 ,  H01J37/32 ,  G02B6/13 ,  H01L21/3065 ,  G02B5/18 ,  H01J37/05 ,  G02B6/12 ,  G02B6/124 ,  G06T19/00 ,  H01J37/073 ,  H01J37/304 ,  H01J37/147

Abstract: Aspects of the disclosure relate to apparatus for the fabrication of waveguides. In one example, an angled ion source is utilized to project ions toward a substrate to form a waveguide which includes angled gratings. In another example, an angled electron beam source is utilized to project electrons toward a substrate to form a waveguide which includes angled gratings. Further aspects of the disclosure provide for methods of forming angled gratings on waveguides utilizing an angled ion beam source and an angled electron beam source.

公开(公告)号：US11446740B2

公开(公告)日：2022-09-20

申请号：US15941812

申请日：2018-03-30

Applicant: Applied Materials, Inc.

Inventor： Christopher A. Rowland ,  Anantha K. Subramani ,  Kasiraman Krishnan ,  Kartik Ramaswamy ,  Thomas B. Brezoczky ,  Swaminathan Srinivasan ,  Jennifer Y. Sun ,  Simon Yavelberg ,  Srinivas D. Nemani ,  Nag B. Patibandla ,  Hou T. Ng

IPC: B22F10/30 ,  B33Y30/00 ,  B33Y10/00 ,  B29C64/153 ,  B22F12/00 ,  B33Y50/02 ,  B23K10/00 ,  B23K10/02 ,  B28B1/00 ,  B22F10/10 ,  B22F12/55 ,  B22F12/63 ,  B22F12/41 ,  B22F3/105 ,  H05B3/00

Abstract: An additive manufacturing system includes a platen to support an object to be fabricated, a dispenser assembly positioned above the platen, and an energy source configured to selectively fuse a layer of powder. The dispenser assembly includes a first dispenser, a second dispenser, and a drive system. The first dispenser delivers a first powder in a first linear region that extends along a first axis, and the second dispenser delivers a second powder in a second linear region that extends parallel to the first linear region and is offset from the first linear region along a second axis perpendicular to the first axis. The drive system a drive system moves the support with the first dispenser and second dispenser together along the second axis.

公开(公告)号：US11430634B2

公开(公告)日：2022-08-30

申请号：US17080802

申请日：2020-10-26

Applicant: Applied Materials, Inc.

Inventor： Ludovic Godet ,  Rutger Meyer Timmerman Thijssen ,  Kartik Ramaswamy ,  Yang Yang ,  Manivannan Thothadri ,  Chien-An Chen

IPC: H01J37/305 ,  H01J37/32 ,  G02B6/13 ,  H01L21/3065 ,  G02B5/18 ,  H01J37/05 ,  G02B6/12 ,  G02B6/124 ,  G06T19/00 ,  H01J37/073 ,  H01J37/304 ,  H01J37/147

Abstract: Aspects of the disclosure relate to apparatus for the fabrication of waveguides. In one example, an angled ion source is utilized to project ions toward a substrate to form a waveguide which includes angled gratings. In another example, an angled electron beam source is utilized to project electrons toward a substrate to form a waveguide which includes angled gratings. Further aspects of the disclosure provide for methods of forming angled gratings on waveguides utilizing an angled ion beam source and an angled electron beam source.

公开(公告)号：US11355321B2

公开(公告)日：2022-06-07

申请号：US15630828

申请日：2017-06-22

Applicant: Applied Materials, Inc.

Inventor： Kenneth S. Collins ,  Michael R. Rice ,  Kartik Ramaswamy ,  James D. Carducci

IPC: H01J37/32 ,  C23C16/458 ,  C23C16/54 ,  C23C16/509 ,  C23C16/455

Abstract: A processing tool for a plasma process includes a chamber body that has an interior space that provides a plasma chamber and that has a ceiling and an opening on a side opposite the ceiling, a workpiece support to hold a workpiece such that at least a portion of a front surface of the workpiece faces the opening, an actuator to generate relative motion between the chamber body and the workpiece support such that the opening moves laterally across the workpiece, a gas distributor to deliver a processing gas to the plasma chamber, an electrode assembly comprising a plurality of coplanar filaments extending laterally through the plasma chamber between the workpiece support and the ceiling, each of the plurality of filaments including a conductor, and a first RF power source to supply a first RF power to the conductors of the electrode assembly to form a plasma.