Invention Grant
- Patent Title: Gate driver circuitry for power transistors
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Application No.: US16672038Application Date: 2019-11-01
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Publication No.: US10854500B2Publication Date: 2020-12-01
- Inventor: Mikkel Høyerby , Allan Nogueras Nielsen
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: EP14197057 20141209
- Main IPC: H02M1/08
- IPC: H02M1/08 ; H01L21/761 ; H01L21/8238 ; H01L27/092 ; H03F3/217

Abstract:
A regulated high side gate driver circuit for power transistors includes: a gate driver having a high side positive supply voltage port and a high side negative supply voltage port, and a floating voltage regulator. The floating voltage regulator includes: a positive regulator input, connectable to a high side DC voltage supply; a regulated DC voltage output; a negative regulator input; a DC reference voltage generator configured to generate a DC reference voltage; and a regulation capacitor connected between positive and negative terminals of the DC reference voltage generator, and configured to suppress noise and ripple within the generated DC reference voltage. The negative regulator input is connected to the high side negative supply voltage port and the regulated DC voltage output is connected to the high side positive supply voltage port of the gate driver.
Public/Granted literature
- US20200135536A1 Gate Driver Circuitry for Power Transistors Public/Granted day:2020-04-30
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