Invention Grant
- Patent Title: Power semiconductor module
-
Application No.: US16531296Application Date: 2019-08-05
-
Publication No.: US10854524B2Publication Date: 2020-12-01
- Inventor: David Guillon , Charalampos Papadopoulos , Dominik Truessel , Fabian Fischer , Samuel Hartmann
- Applicant: ABB Schweiz AG
- Applicant Address: CH Baden
- Assignee: ABB Schweiz AG
- Current Assignee: ABB Schweiz AG
- Current Assignee Address: CH Baden
- Agency: Slater Matsil, LLP
- Priority: EP17154673 20170203
- Main IPC: H01L23/053
- IPC: H01L23/053 ; H01L23/24 ; H01L23/31 ; H01L23/492 ; H01L23/00
Abstract:
The present application provides a power semiconductor module, including a support which carries at least one power semiconductor device, the support together with the power semiconductor device is at least partly located in a housing, the support and the power semiconductor device are at least partly covered by a sealing material, additionally to the sealing material, a protecting material is provided in the housing, the protecting material is formed from silicon gel and the protecting material at least partly covers at least one of the support, the power semiconductor device and the sealing material.
Public/Granted literature
- US20190363029A1 POWER SEMICONDUCTOR MODULE Public/Granted day:2019-11-28
Information query
IPC分类:
