Invention Grant
- Patent Title: Method for producing IGBT with dV/dt controllability
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Application No.: US16837337Application Date: 2020-04-01
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Publication No.: US10854739B2Publication Date: 2020-12-01
- Inventor: Antonio Vellei , Markus Beninger-Bina , Matteo Dainese , Christian Jaeger , Johannes Georg Laven , Alexander Philippou , Francisco Javier Santos Rodriguez
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102017124872 20171024
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L29/06 ; H01L29/40 ; H01L29/66 ; H01L29/423 ; H01L29/417 ; H01L29/10 ; H01L21/324 ; H01L21/265 ; H01L21/225 ; H01L21/033
Abstract:
A power semiconductor device includes: a drift region; a plurality of IGBT cells each having a plurality of trenches extending into the drift region along a vertical direction and laterally confining at least one active mesa which includes an upper section of the drift region; and an electrically floating barrier region of an opposite conductivity type as the drift region and spatially confined, in and against the vertical direction, by the drift region. A total volume of all active mesas is divided into first and second shares, the first share not laterally overlapping with the barrier region and the second share laterally overlapping with the barrier region. The first share carries the load current at least within a range of 0% to 100% of a nominal load current. The second share carries the load current if the load current exceeds at least 0.5% of the nominal load current.
Public/Granted literature
- US20200235232A1 Method for Producing IGBT with dV/dt Controllability Public/Granted day:2020-07-23
Information query
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