Invention Grant
- Patent Title: IGBT module with improved heat dissipation structure
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Application No.: US16442538Application Date: 2019-06-16
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Publication No.: US10861768B2Publication Date: 2020-12-08
- Inventor: Tze-Yang Yeh , Chun-Lung Wu
- Applicant: AMULAIRE THERMAL TECHNOLOGY, INC.
- Applicant Address: TW New Taipei
- Assignee: AMULAIRE THERMAL TECHNOLOGY, INC.
- Current Assignee: AMULAIRE THERMAL TECHNOLOGY, INC.
- Current Assignee Address: TW New Taipei
- Agency: Li & Cai Intellectual Property Office
- Priority: TW107143684A 20181205
- Main IPC: H01L23/373
- IPC: H01L23/373 ; H01L29/739 ; H01L23/367

Abstract:
An IGBT module with an improved heat dissipation structure includes a layer of IGBT chips, a bonding layer, a thick copper layer, a polymer composite layer, a thermal spray layer, and a heat dissipation layer. The thermal spray layer is disposed on the heat dissipation layer. The polymer composite layer is disposed on the thermal spray layer. The thick copper layer is disposed on the polymer composite layer. The bonding layer is disposed on the thick copper layer. The layer of IGBT chips is disposed on the bonding layer.
Public/Granted literature
- US20200185303A1 IGBT MODULE WITH IMPROVED HEAT DISSIPATION STRUCTURE Public/Granted day:2020-06-11
Information query
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