Photovoltaic devices including doped semiconductor films

Invention Grant

US10861994B2 Photovoltaic devices including doped semiconductor films 有权

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Patent Title: Photovoltaic devices including doped semiconductor films
Application No.: US16435838

Application Date: 2019-06-10
Publication No.: US10861994B2

Publication Date: 2020-12-08
Inventor: Anke Abken , Markus Gloeckler , Roger Green , Akhlesh Gupta , Upali Jayamaha , Peter Meyers , Rick Powell
Applicant: First Solar, Inc.
Applicant Address: US AZ Tempe
Assignee: First Solar, Inc.
Current Assignee: First Solar, Inc.
Current Assignee Address: US AZ Tempe
Agency: MacMillan, Sobanski & Todd, LLC
Main IPC: H01L31/073
IPC: H01L31/073 ; H01L31/18 ; H01L31/0224 ; H01L31/0304 ; H01L31/0296

Photovoltaic devices including doped semiconductor films

Abstract:

A photovoltaic cell can include a dopant in contact with a semiconductor layer.

Public/Granted literature

US20190296180A1 PHOTOVOLTAIC DEVICES INCLUDING DOPED SEMICONDUCTOR FILMS Public/Granted day:2019-09-26

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L31/00	对红外辐射、光、较短波长的电磁辐射，或微粒辐射敏感的，并且专门适用于把这样的辐射能转换为电能的，或者专门适用于通过这样的辐射进行电能控制的半导体器件；专门适用于制造或处理这些半导体器件或其部件的方法或设备；其零部件（H01L51/42优先；由形成在一共用衬底内或其上的多个固态组件，而不是辐射敏感元件与一个或多个电光源的结合所组成的器件入H01L27/00）
H01L31/04	.用作光伏〔PV〕转换器件（制造中其测试入H01L21/66；制造之后其测试入H02S50/10）
H01L31/06	..以至少有一个电位跃变势垒或表面势垒为特征的
H01L31/072	...只是PN异质结型势垒的
H01L31/073	....只包括AIIBVI化合物的半导体，例如CdS/CdTe太阳能电池