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    Ag-doped photovoltaic devices and method of making
    1.
    发明授权
    Ag-doped photovoltaic devices and method of making 有权

    公开(公告)号：US11450778B2

    公开(公告)日：2022-09-20

    申请号：US16305455

    申请日：2017-05-31

    Applicant: First Solar, Inc.

    Inventor： Kenneth Ring ,  William H. Huber ,  Hongying Peng ,  Markus Gloeckler ,  Gopal Mor ,  Feng Liao ,  Zhibo Zhao ,  Andrei Los

    IPC: H01L31/0296 ,  H01L31/073 ,  H01L31/18

    Abstract: A doped photovoltaic device is presented. The photovoltaic device includes a semiconductor absorber layer or stack disposed between a front contact and a back contact. The absorber layer comprises cadmium, selenium, and tellurium doped with Ag, and optionally with Cu. The Ag dopant may be added to the absorber in amounts ranging from 5×1015/cm3 to 2.5×1017/cm3 via any of several methods of application before, during, or after deposition of the absorber layer. The photovoltaic device has improved Fill Factor and PMAX at higher Pr(=Isc*Voc product) values, e.g. about 160 W, which results in improved conversion efficiency compared to a device not doped with Ag. Improved PT may result from increased Isc, increased Voc, or both.

    PHOTOVOLTAIC DEVICE WITH TRANSPARENT TUNNEL JUNCTION
    4.
    发明申请
    PHOTOVOLTAIC DEVICE WITH TRANSPARENT TUNNEL JUNCTION 审中-公开

    公开(公告)号：US20190296174A1

    公开(公告)日：2019-09-26

    申请号：US16340984

    申请日：2017-10-11

    Applicant: First Solar, Inc.

    Inventor： Markus Gloeckler ,  Fang Mei ,  Wei Zhang

    IPC: H01L31/0725 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/073

    Abstract: A photovoltaic device includes a substrate, a semiconductor stack and a transparent tunnel junction. The semiconductor stack includes an n-type layer selected from a first transparent conductive oxide layer, or a window layer, or both; and a p-type absorber layer disposed on the n-type layer, wherein the absorber layer consists essentially of CdSexTe(1-x), wherein x is from 1 to about 40 at. %. The transparent tunnel junction comprises a transparent interface layer of CdyZn(1-y)Te doped to be p+type, and a transparent contact layer doped to be n+type, and the interface layer is disposed between the p-type absorber layer and the transparent contact layer. In bifacial embodiments, the tunnel junction forms a transparent back contact and electrode; and in multi-junction embodiments, the tunnel junction forms a diode-like connector between top and bottom cells. The transparent contact layer may comprise tin oxide or zinc oxide doped with aluminum, fluorine or indium. The photovoltaic device may also include an electron reflector layer and/or an optical reflector layer.

    Photovoltaic device with transparent tunnel junction
    9.
    发明授权
    Photovoltaic device with transparent tunnel junction 有权

    公开(公告)号：US12206037B2

    公开(公告)日：2025-01-21

    申请号：US16340984

    申请日：2017-10-11

    Applicant: First Solar, Inc.

    Inventor： Markus Gloeckler ,  Fang Mei ,  Wei Zhang

    IPC: H01L31/044 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/0725 ,  H01L31/073

    Abstract: A photovoltaic device includes a substrate, a semiconductor stack and a transparent tunnel junction. The semiconductor stack includes an n-type layer selected from a first transparent conductive oxide layer, or a window layer, or both; and a p-type absorber layer disposed on the n-type layer, wherein the absorber layer consists essentially of CdSexTe(1-x), wherein x is from 1 to about 40 at. %. The transparent tunnel junction comprises a transparent interface layer of CdyZn(1-y)Te doped to be p+type, and a transparent contact layer doped to be n+type, and the interface layer is disposed between the p-type absorber layer and the transparent contact layer. In bifacial embodiments, the tunnel junction forms a transparent back contact and electrode; and in multi-junction embodiments, the tunnel junction forms a diode-like connector between top and bottom cells. The transparent contact layer may comprise tin oxide or zinc oxide doped with aluminum, fluorine or indium. The photovoltaic device may also include an electron reflector layer and/or an optical reflector layer.

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