Invention Grant
- Patent Title: Memory management method, memory storage device and memory control circuit unit
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Application No.: US16170064Application Date: 2018-10-25
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Publication No.: US10884660B2Publication Date: 2021-01-05
- Inventor: Chen Yap Tan
- Applicant: PHISON ELECTRONICS CORP.
- Applicant Address: TW Miaoli
- Assignee: PHISON ELECTRONICS CORP.
- Current Assignee: PHISON ELECTRONICS CORP.
- Current Assignee Address: TW Miaoli
- Agency: JCIPRNET
- Priority: TW107131602A 20180907
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G06F13/16

Abstract:
An exemplary embodiment of the disclosure provides a memory management method for a rewritable non-volatile memory module. The method includes: receiving a first type command from a host system and temporarily storing the first type command to a first command queue; after receiving the first type command, receiving a second type command from the host system and temporarily storing the second type command to a second command queue; if the first command queue meets a preset condition, performing a programming operation for programming the rewritable non-volatile memory module according to the first type command in the first command queue; and after performing the programming operation, transmitting a response message corresponding to the second type command in the second command queue to the host system.
Public/Granted literature
- US20200081653A1 MEMORY MANAGEMENT METHOD, MEMORY STORAGE DEVICE AND MEMORY CONTROL CIRCUIT UNIT Public/Granted day:2020-03-12
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