Invention Grant
- Patent Title: Reading even data lines or odd data lines coupled to memory cell strings
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Application No.: US16226713Application Date: 2018-12-20
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Publication No.: US10885987B2Publication Date: 2021-01-05
- Inventor: Violante Moschiano , Andrea D'Alessandro , Tommaso Vali , Giovanni Santin
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee Address: US ID Boise
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: G11C16/26
- IPC: G11C16/26 ; G11C16/16 ; G11C16/24 ; G11C16/08 ; G11C16/04
Abstract:
A method for reading an array of memory cells includes enabling a current to flow through even data lines of the array of memory cells. The method includes blocking a current from flowing through odd data lines of the array of memory cells. The method includes sensing data stored in memory cells coupled to the even data lines.
Information query
