Invention Grant
- Patent Title: Methods for forming low temperature semiconductor layers and related semiconductor device structures
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Application No.: US15974988Application Date: 2018-05-09
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Publication No.: US10886123B2Publication Date: 2021-01-05
- Inventor: Petri Raisanen , Moataz Bellah Mousa , Peng-Fu Hsu
- Applicant: ASM IP Holding B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP Holding B.V.
- Current Assignee: ASM IP Holding B.V.
- Current Assignee Address: NL Almere
- Agency: Snell & Wilmer L.L.P.
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36 ; H01L21/02 ; H01L21/3205
Abstract:
A method for forming a metal nitride film with good film closure at low temperatures is disclosed. The method may comprise utilizing plasma to form NH and NH2 radicals to allow for the formation of the metal nitride at low temperatures. The method may also comprise flowing an etch gas to result in an amorphous film with uniform thickness. The method may also comprise flowing an alkyl hydrazine to inhibit three-dimensional island growth of the metal nitride film.
Public/Granted literature
- US20180350588A1 METHODS FOR FORMING LOW TEMPERATURE SEMICONDUCTOR LAYERS AND RELATED SEMICONDUCTOR DEVICE STRUCTURES Public/Granted day:2018-12-06
Information query
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