Invention Grant
- Patent Title: Method for fabricating tunneling field effect transistor having interfacial layer containing nitrogen
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Application No.: US16581750Application Date: 2019-09-25
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Publication No.: US10886395B2Publication Date: 2021-01-05
- Inventor: An-Chi Liu , Chun-Hsien Lin
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN201710655620 20170803
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/49 ; H01L23/535 ; H01L21/768 ; H01L29/66 ; H01L29/20 ; H01L29/423 ; H01L29/40 ; H01L29/739
Abstract:
A method for fabricating a tunnel field effect transistor (TFET) includes the steps of providing a substrate and then forming an interfacial layer on the substrate. Preferably, the step of forming the interfacial layer includes the steps of: performing a plasma treatment process to inject a first gas containing nitrogen; injecting a second gas containing oxygen; and injecting a precursor to react with the first gas and the second gas for forming the interfacial layer.
Public/Granted literature
- US20200020792A1 TUNNELING FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING THE SAME Public/Granted day:2020-01-16
Information query
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