Invention Grant
- Patent Title: Manufacturing method of light-emitting device
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Application No.: US16239153Application Date: 2019-01-03
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Publication No.: US10886438B2Publication Date: 2021-01-05
- Inventor: Jan Way Chien , Tzchiang Yu , Hsiao Yu Lin , Chyi Yang Sheu
- Applicant: EPISTAR CORPORATION
- Applicant Address: TW Hsinchu
- Assignee: EPISTAR CORPORATION
- Current Assignee: EPISTAR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: Patterson + Sheridan, LLP
- Priority: TW102144302A 20131129
- Main IPC: H01L29/22
- IPC: H01L29/22 ; H01L33/44 ; H01L33/40 ; H01L33/22 ; H01L33/38 ; H01L33/62

Abstract:
A manufacturing method of a light-emitting device, comprising providing a growth substrate; forming a light-emitting stack on the growth substrate, the light-emitting stack comprising a first surface, a second surface opposite to the first surface, and a sidewall connecting the first surface and the second surface; forming a patterned dielectric layer on the first surface, the patterned dielectric layer comprising a first portion and a second portion separated from the first portion; attaching a permanent substrate to the light-emitting stack; removing the growth substrate after the permanent substrate is attached to the light-emitting stack; forming a plurality of trenches in the light-emitting stack to form a plurality of light-emitting units, wherein the plurality of light-emitting units are insulated from each other; and cutting along the plurality of trenches, wherein an outer part of the second portion of the patterned dielectric layer is thinned.
Public/Granted literature
- US20190157513A1 MANUFACTURING METHOD OF LIGHT-EMITTING DEVICE Public/Granted day:2019-05-23
Information query
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