Invention Grant
- Patent Title: Power transistor control circuit
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Application No.: US16692001Application Date: 2019-11-22
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Publication No.: US10886917B2Publication Date: 2021-01-05
- Inventor: Dominique Bergogne
- Applicant: Commissariat à l'Energie Atomique et aux Energies Alternatives
- Applicant Address: FR Paris
- Assignee: Commissariat à l'Energie Atomique et aux Energies Alternatives
- Current Assignee: Commissariat à l'Energie Atomique et aux Energies Alternatives
- Current Assignee Address: FR Paris
- Agency: Moreno IP Law LLC
- Priority: FR1871796 20181123
- Main IPC: H02M1/08
- IPC: H02M1/08 ; H02M7/5387 ; H02M7/5388 ; H02M7/5395 ; H02M7/539 ; H03K17/687

Abstract:
The present invention concerns a circuit for converting a first control signal referenced to a first potential into a second signal referenced to a second variable potential, including: a first transistor between a first terminal for supplying said second signal and a second terminal at said second variable potential; and at least one first branch including, in series between a gate of the first transistor and a third terminal at said first potential, a second transistor, a first resistive element, and a third transistor, a gate of the third transistor being intended to receive the first signal and a gate of the second transistor being coupled to the second terminal, the gate of the second transistor being further coupled, by a first clipping element, to its source.
Public/Granted literature
- US20200169254A1 POWER TRANSISTOR CONTROL CIRCUIT Public/Granted day:2020-05-28
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