Invention Grant
- Patent Title: Insulating structure of high electron mobility transistor and manufacturing method thereof
-
Application No.: US16525525Application Date: 2019-07-29
-
Publication No.: US10892358B1Publication Date: 2021-01-12
- Inventor: Chun-Ming Chang , Wen-Jung Liao
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN201910618716 20190710
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L21/02 ; H01L29/66
Abstract:
An insulating structure of a high electron mobility transistor (HEMT) is provided, which comprises a gallium nitride layer, an aluminum gallium nitride layer disposed on the gallium nitride layer, an insulating doped region disposed in the gallium nitride layer and the aluminum gallium nitride layer, and two sidewall insulating structures disposed at two sides of the insulating doped region respectively.
Public/Granted literature
- US20210013335A1 INSULATING STRUCTURE OF HIGH ELECTRON MOBILITY TRANSISTOR AND MANUFACTURING METHOD THEREOF Public/Granted day:2021-01-14
Information query
IPC分类:
