- Patent Title: Ion beam mill etch depth monitoring with nanometer-scale resolution
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Application No.: US15681210Application Date: 2017-08-18
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Publication No.: US10896803B2Publication Date: 2021-01-19
- Inventor: Shane A. Cybart , Robert C. Dynes
- Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Applicant Address: US CA Oakland
- Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Current Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Current Assignee Address: US CA Oakland
- Agency: Musick Davison LLP
- Agent Eleanor Musick
- Main IPC: G01N17/00
- IPC: G01N17/00 ; H01J37/30 ; H01J37/304 ; G01N27/04 ; G01B7/06 ; G01B7/26 ; H01J37/305 ; H01L39/24 ; H01L21/66

Abstract:
A method for measuring conductance of a material real-time during etching/milling includes providing a fixture having a socket for receiving the material. The socket is attached to a printed circuit board (PCB) mounted on one side of a plate that has at least one opening for providing ion beam access to the material sample. Conductive probes extend from the other side of the PCB to contact and span a target area of the material. A measurement circuit in electrical communication with the probes measures the voltage produced when a current is applied across the material sample to measure changes in electrical properties of the sample over time.
Public/Granted literature
- US20180053626A1 ION BEAM MILL ETCH DEPTH MONITORING WITH NANOMETER-SCALE RESOLUTION Public/Granted day:2018-02-22
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