Techniques are described for power detection of an amplified signal. For example, power detection described herein can receive an amplified signal from a power amplifier, and can generate an output signal that can be fed back to help regulate an output level of the power amplifier. Embodiments receive the amplified signal can be received by a transistor. A first measurement can be obtained at the transistor's emitter corresponding to an average bias level of the amplified signal, and a second measurement can be obtained at the transistor's base. The output signal can be generated as a function of a difference between the two measurements. Some embodiments further compensate for a measured effective diode voltage corresponding to a base-emitter voltage. Such an approach can generate the power detector output signal to be independent of the β of the transistor, and therefore less affected by variations in process corners and temperature.