Invention Grant
- Patent Title: Optoelectronic device
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Application No.: US16893342Application Date: 2020-06-04
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Publication No.: US10910520B2Publication Date: 2021-02-02
- Inventor: Tzung-Shiun Yeh , Li-Ming Chang , Chien-Fu Shen
- Applicant: EPISTAR CORPORATION
- Applicant Address: TW Hsinchu
- Assignee: EPISTAR CORPORATION
- Current Assignee: EPISTAR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: Patterson + Sheridan, LLP
- Main IPC: H01L33/36
- IPC: H01L33/36 ; H01L33/62 ; H01L33/38 ; H01L33/14 ; H01L33/20

Abstract:
An optoelectronic device includes a semiconductor stack; a current blocking region, including a first pad portion formed on the semiconductor stack and wherein the current blocking region includes insulated material; a first opening, formed in the first pad portion, exposing a top surface of the semiconductor stack; a transparent conductive layer, formed on the current blocking region and/or the top surface of the semiconductor stack, including a second opening exposing the first opening; and a first electrode, formed on the transparent conductive layer and including a first pad electrode formed on the first pad portion of the current blocking region and electrically connecting to the semiconductor stack through the first opening; wherein in a top view, the first opening and the second opening have different shapes.
Public/Granted literature
- US20200303590A1 OPTOELECTRONIC DEVICE Public/Granted day:2020-09-24
Information query
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