Invention Grant
- Patent Title: Current in-rush limiter
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Application No.: US16790493Application Date: 2020-02-13
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Publication No.: US10910938B2Publication Date: 2021-02-02
- Inventor: Antony Christopher Routledge
- Applicant: pSemi Corporation
- Applicant Address: US CA San Diego
- Assignee: pSemi Corporation
- Current Assignee: pSemi Corporation
- Current Assignee Address: US CA San Diego
- Agency: Jaquez Land Greenhaus LLP
- Agent John Land, Esq.
- Main IPC: H02M1/08
- IPC: H02M1/08 ; H02M3/07 ; H03K17/16

Abstract:
Circuits and methods for limiting excessive current in circuits (such as step-up DC-to-DC converter circuits) in which very low ohmic FETs (VLOFETs) are used in circuit pathways that are subjected to startup in-rush current. Embodiments include a current mirror driver circuit that can be coupled to the gates of a VLOFET to form a current mirror that limits current flow through the VLOFET. The current mirror driver circuit provides for pulsed operation so that a coupled VLOFET still toggles between an OFF state and a current limited mode, particularly during a startup period. By using the current mirror driver circuit in conjunction with VLOFETs in circuit pathways that are subjected to startup in-rush current, in-rush current can be regulated to an acceptable level. Notably, no additional impedances are required in circuit pathways that are subjected to startup in-rush current to limit in-rush current, thus avoiding loss of efficiency.
Public/Granted literature
- US20200266696A1 Current In-Rush Limiter Public/Granted day:2020-08-20
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