Invention Grant
- Patent Title: Using sacrificial polymer materials in semiconductor processing
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Application No.: US16676881Application Date: 2019-11-07
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Publication No.: US10916418B2Publication Date: 2021-02-09
- Inventor: Michael T. Andreas , Jerome A. Imonigie , Prashant Raghu , Sanjeev Sapra , Ian K. McDaniel
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: H01L21/02
- IPC: H01L21/02 ; B81C1/00

Abstract:
In an example, a wet cleaning process is performed to clean a structure having features and openings between the features while preventing drying of the structure. After performing the wet cleaning process, a polymer solution is deposited in the openings while continuing to prevent any drying of the structure. A sacrificial polymer material is formed in the openings from the polymer solution. The structure may be used in semiconductor devices, such as integrated circuits, memory devices, MEMS, among others.
Public/Granted literature
- US20200075316A1 USING SACRIFICIAL POLYMER MATERIALS IN SEMICONDUCTOR PROCESSING Public/Granted day:2020-03-05
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