Methods for forming low resistivity metal silicide interconnects using one or a combination of a physical vapor deposition (PVD) process and an anneal process are described herein. In one embodiment, a method of forming a plurality of wire interconnects includes flowing a sputtering gas into a processing volume of a processing chamber, applying a power to a target disposed in the processing volume, forming a plasma in a region proximate to the sputtering surface of the target, and depositing the metal and silicon layer on the surface of the substrate. Herein, the first target comprises a metal silicon alloy and a sputtering surface thereof is angled with respect to a surface of the substrate at between about 10° and about 50°.