Invention Grant
- Patent Title: Bandgap-shifted semiconductor surface and method for making same, and apparatus for using same
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Application No.: US14680999Application Date: 2015-04-07
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Publication No.: US10916674B2Publication Date: 2021-02-09
- Inventor: John Michael Guerra
- Applicant: NANOPTEK CORPORATION
- Applicant Address: US MA Concord
- Assignee: NANOPTEK CORPORATION
- Current Assignee: NANOPTEK CORPORATION
- Current Assignee Address: US MA Concord
- Agent David J. Cole
- Main IPC: C25B1/00
- IPC: C25B1/00 ; C25B11/03 ; H01L31/054 ; H02S40/20 ; B01J35/00 ; B01J21/06 ; B01J37/06 ; B01J37/34

Abstract:
Titania is a semiconductor and photocatalyst that is also chemically inert. With its bandgap of 3.2 and greater, to activate the photocatalytic property of titania requires light of about 390 nm wavelength, which is in the ultra-violet, where sunlight is very low in intensity. A method and devices are disclosed wherein stress is induced and managed in a thin film of titania in order to shift and lower the bandgap energy into the longer wavelengths that are more abundant in sunlight. Applications of this stress-induced bandgap-shifted titania photocatalytic surface include photoelectrolysis for production of hydrogen gas from water, photovoltaics for production of electricity, and photocatalysis for detoxification and disinfection.
Public/Granted literature
- US20150214411A1 BANDGAP-SHIFTED SEMICONDUCTOR SURFACE AND METHOD FOR MAKING SAME, AND APPARATUS FOR USING SAME Public/Granted day:2015-07-30
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