Invention Grant
- Patent Title: Stacked nanofluidics structure
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Application No.: US16527597Application Date: 2019-07-31
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Publication No.: US10935515B2Publication Date: 2021-03-02
- Inventor: Kangguo Cheng
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Robert Sullivan
- Main IPC: G01N27/414
- IPC: G01N27/414 ; H01L21/02 ; H01L21/306 ; H01L29/06 ; B01L3/00 ; H01L29/16

Abstract:
Methods and devices for a stacked nanofluidic sensor are described. The stacked nanofluidic sensor and methods for forming a nanosheet stack of at least two alternating layers of a first nanosheet material and a second nanosheet material on a substrate. Additionally, a gate structure is formed on the nanosheet stack. Further, nanofluidic channels are formed within the gate structure, including removing each layer of the first nanosheet material within the gate structure to form a channel configured to receive a nanofluidic sample.
Public/Granted literature
- US20190353612A1 STACKED NANOFLUIDICS STRUCTURE Public/Granted day:2019-11-21
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