Invention Grant
- Patent Title: Semiconductor crystal substrate, infrared detector, and method for producing semiconductor crystal substrate
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Application No.: US16272027Application Date: 2019-02-11
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Publication No.: US10937647B2Publication Date: 2021-03-02
- Inventor: Shigekazu Okumura , Shuichi Tomabechi , Ryo Suzuki
- Applicant: FUJITSU LIMITED
- Applicant Address: JP Kawasaki
- Assignee: FUJITSU LIMITED
- Current Assignee: FUJITSU LIMITED
- Current Assignee Address: JP Kawasaki
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/205 ; H01L35/26 ; H01S5/343 ; H01L29/78 ; G01J1/02 ; H01L27/146 ; H01L33/00 ; H01L27/144 ; H01L31/10 ; H01L21/20 ; H01L21/203 ; G01J1/04 ; G01J1/44 ; H01L21/28 ; H01L29/15 ; H01L29/66 ; H01L29/778 ; H01L31/0304 ; H01L31/0352 ; H01L31/0392 ; H01L31/18 ; H01L33/06 ; H01L33/12 ; H01L33/30 ; H01L35/18 ; H01L35/32 ; H01L35/34 ; H01S5/22
Abstract:
A semiconductor crystal substrate includes a crystal substrate that is formed of a material including GaSb or InAs, a first buffer layer that is formed on the crystal substrate and formed of a material including GaSb, the first buffer layer having n-type conductivity, and a second buffer layer that is formed on the first buffer layer and formed of a material including GaSb, the second buffer layer having p-type conductivity.
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