Invention Grant
- Patent Title: Selective and self-limiting tungsten etch process
-
Application No.: US16583749Application Date: 2019-09-26
-
Publication No.: US10950498B2Publication Date: 2021-03-16
- Inventor: Susmit Singha Roy , Srinivas Gandikota , Pramit Manna , Abhijit Basu Mallick
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L21/301
- IPC: H01L21/301 ; H01L21/46 ; H01L21/78 ; H01L21/768 ; H01L21/02 ; H01L27/11582 ; H01L27/11556 ; H01L23/528 ; H01L21/285 ; H01L23/532 ; H01L21/311
Abstract:
Methods of dep-etch in semiconductor devices (e.g. V-NAND) are described. A metal layer is deposited in a feature. The metal layer is removed by low temperature atomic layer etching by oxidizing the surface of the metal layer and etching the oxide in a layer-by-layer fashion. After removal of the metal layer, the features are filled with a metal.
Public/Granted literature
- US20200027785A1 Selective and Self-Limiting Tungsten Etch Process Public/Granted day:2020-01-23
Information query
IPC分类:
