中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

115 records (took 0.024 seconds)

    Methods for producing high-density carbon films for hardmasks and other patterning applications
    1.
    发明授权
    Methods for producing high-density carbon films for hardmasks and other patterning applications 有权

    公开(公告)号：US11664226B2

    公开(公告)日：2023-05-30

    申请号：US17035265

    申请日：2020-09-28

    Applicant: Applied Materials, Inc.

    Inventor： Jui-Yuan Hsu ,  Pramit Manna ,  Karthik Janakiraman

    IPC: H01L21/033 ,  C23C16/27 ,  C23C16/56 ,  C23C16/50

    CPC classification number: H01L21/0337 ,  C23C16/276 ,  C23C16/50 ,  C23C16/56 ,  H01L21/0332

    Abstract: Embodiments of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the embodiments described herein provide methods for producing reduced-stress diamond-like carbon films for patterning applications. In one or more embodiments, a method includes flowing a deposition gas containing a hydrocarbon compound into a processing volume of a process chamber having a substrate positioned on an electrostatic chuck and generating a plasma above the substrate in the processing volume by applying a first RF bias to the electrostatic chuck to deposit a stressed diamond-like carbon film on the substrate. The stressed diamond-like carbon film has a compressive stress of −500 MPa or greater. The method further includes heating the stressed diamond-like carbon film to produce a reduced-stress diamond-like carbon film during a thermal annealing process. The reduced-stress diamond-like carbon film has a compressive stress of less than −500 MPa.

    Hardmasks and processes for forming hardmasks by plasma-enhanced chemical vapor deposition
    2.
    发明授权
    Hardmasks and processes for forming hardmasks by plasma-enhanced chemical vapor deposition 有权

    公开(公告)号：US11421324B2

    公开(公告)日：2022-08-23

    申请号：US17075812

    申请日：2020-10-21

    Applicant: Applied Materials, Inc.

    Inventor： Jui-Yuan Hsu ,  Krishna Nittala ,  Pramit Manna ,  Karthik Janakiraman

    IPC: C23C16/50 ,  H01J37/32 ,  C23C16/26 ,  C23C16/56 ,  C23C16/458 ,  H01L21/033 ,  H01L21/311

    Abstract: Embodiments of the present disclosure generally relate to hardmasks and to processes for forming hardmasks by plasma-enhanced chemical vapor deposition (PECVD). In an embodiment, a process for forming a hardmask layer on a substrate is provided. The process includes introducing a substrate to a processing volume of a PECVD chamber, the substrate on a substrate support, the substrate support comprising an electrostatic chuck, and flowing a process gas into the processing volume within the PECVD chamber, the process gas comprising a carbon-containing gas. The process further includes forming, under plasma conditions, an energized process gas from the process gas in the processing volume, electrostatically chucking the substrate to the substrate support, depositing a first carbon-containing layer on the substrate while electrostatically chucking the substrate, and forming the hardmask layer by depositing a second carbon-containing layer on the substrate.

    Low Temperature High-Quality Dielectric Films
    5.
    发明申请
    Low Temperature High-Quality Dielectric Films 有权

    公开(公告)号：US20210043450A1

    公开(公告)日：2021-02-11

    申请号：US17069008

    申请日：2020-10-13

    Applicant: Applied Materials, Inc.

    Inventor： Eswaranand Venkatasubramanian ,  Samuel E. Gottheim ,  Pramit Manna ,  Abhijit Basu Mallick

    IPC: H01L21/02 ,  H01L21/311 ,  H01J37/32

    Abstract: Techniques for deposition of high-density dielectric films for patterning applications are described. More particularly, a method of processing a substrate is provided. The method includes flowing a precursor-containing gas mixture into a processing volume of a processing chamber having a substrate positioned on an electrostatic chuck. The substrate is maintained at a pressure between about 0.1 mTorr and about 10 Torr. A plasma is generated at the substrate level by applying a first RF bias to the electrostatic chuck to deposit a dielectric film on the substrate. The dielectric film has a refractive index in a range of about 1.5 to about 3.

Patent Agency Ranking