Invention Grant
- Patent Title: Methods of etching metal-containing layers
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Application No.: US16828751Application Date: 2020-03-24
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Publication No.: US10957558B2Publication Date: 2021-03-23
- Inventor: Akhil Mehrotra , Gene Lee , Abhijit Patil , Shan Jiang , Zohreh Hesabi
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan, LLP
- Main IPC: H01L21/321
- IPC: H01L21/321 ; H01L21/3213 ; H01L21/285 ; H01L21/3065 ; H01L21/311
Abstract:
A method of removing a metal-containing layer (e.g., tungsten) from a substrate is provided. The method includes generating a first plasma in a process volume of a plasma chamber when a patterned device is disposed on a substrate support in the process volume. The patterned device includes a patterned region and an unpatterned region; a substrate; a tungsten-containing layer formed over the substrate; a supporting layer disposed between the tungsten-containing layer and the substrate. The patterned region includes exposed surfaces of the supporting layer and the unpatterned region does not include any exposed surfaces of the supporting layer. The method further includes depositing a first film over the patterned region of the tungsten-containing layer with the first plasma; and removing portions of the unpatterned region of the tungsten-containing layer with the first plasma without depositing the first film over the unpatterned region.
Public/Granted literature
- US20200227276A1 METHODS OF ETCHING METAL-CONTAINING LAYERS Public/Granted day:2020-07-16
Information query
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