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    Highly selective etching methods for etching dielectric materials
    1.
    发明授权
    Highly selective etching methods for etching dielectric materials 有权
    用于蚀刻电介质材料的高选择性蚀刻方法

    公开(公告)号：US09595451B1

    公开(公告)日：2017-03-14

    申请号：US14887254

    申请日：2015-10-19

    Applicant: Applied Materials, Inc.

    Inventor： Hailong Zhou ,  Gene Lee ,  Liming Yang

    IPC: H01L21/311 ,  H01L21/02

    CPC classification number: H01L21/31116 ,  H01L21/31144

    Abstract: Methods for forming high aspect ratio features using an etch process are provided. In one embodiment, a method for etching a dielectric layer to form features in the dielectric layer includes (a) supplying an etching gas mixture during a first mode to etch a portion of a dielectric layer disposed on a substrate while forming a passivation protection in the dielectric layer, wherein the dielectric layer is etched through openings defined in a patterned mask layer disposed on the dielectric layer, (b) supplying an etching gas mixture during a second mode to continue forming the passivation protection in the dielectric layer without etching the dielectric layer, and repeatedly performing (a) and (b) to form features in the dielectric layer until a surface of the substrate is exposed.

    Abstract translation: 提供了使用蚀刻工艺形成高纵横比特征的方法。 在一个实施例中，用于蚀刻电介质层以在电介质层中形成特征的方法包括（a）在第一模式期间提供蚀刻气体混合物以蚀刻布置在衬底上的介电层的一部分，同时在 电介质层，其中通过限定在设置在电介质层上的图案化掩模层中限定的开口蚀刻电介质层，（b）在第二模式期间提供蚀刻气体混合物，以在电介质层中继续形成钝化保护，而不蚀刻介电层 并且重复地执行（a）和（b）以形成电介质层中的特征，直到基板的表面露出。

    MASK ETCH FOR PATTERNING
    2.
    发明申请
    MASK ETCH FOR PATTERNING 有权
    掩蔽蚀刻

    公开(公告)号：US20160293441A1

    公开(公告)日：2016-10-06

    申请号：US14677890

    申请日：2015-04-02

    Applicant: Applied Materials Inc.

    Inventor： Gene Lee ,  Lucy Chen

    IPC: H01L21/311 ,  C23C16/52 ,  C23C16/50 ,  H01L21/02 ,  H01L21/67

    CPC classification number: H01L21/31133 ,  C23C16/50 ,  C23C16/52 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31144 ,  H01L21/67069 ,  H01L27/1157 ,  H01L27/11575 ,  H01L27/11582

    Abstract: A hard mask layer is deposited on a feature layer over a substrate. The hard mask layer comprises an organic mask layer. An opening in the organic mask layer is formed using a first gas comprising a halogen element at a first temperature greater than a room temperature to expose a portion of the feature layer. In one embodiment, a gas comprising a halogen element is supplied to a chamber. An organic mask layer on an insulating layer over a substrate is etched using the halogen element at a first temperature to form an opening to expose a portion of the insulating layer.

    Abstract translation: 硬掩模层沉积在衬底上的特征层上。 硬掩模层包括有机掩模层。 在大于室温的第一温度下，使用包含卤素元素的第一气体形成有机掩模层中的开口，以暴露特征层的一部分。 在一个实施方案中，将包含卤素元素的气体供应到室。 使用卤素元素在第一温度下蚀刻在衬底上的绝缘层上的有机掩模层，以形成露出绝缘层的一部分的开口。

    Selective barrier metal etching
    3.
    发明授权
    Selective barrier metal etching 有权

    公开(公告)号：US12266537B2

    公开(公告)日：2025-04-01

    申请号：US17592365

    申请日：2022-02-03

    Applicant: Applied Materials, Inc.

    Inventor： Jonathan Shaw ,  Gene Lee

    IPC: H01L21/311 ,  H01J37/32 ,  H01L21/768

    Abstract: A method for selective barrier metal etching includes performing a hydrogen implantation process, in an inductively coupled plasma (ICP) etch chamber, to chemically reduce an oxidized portion of a barrier metal layer formed within a feature in a metal layer on the barrier metal layer, and performing an etch process, in the ICP etch chamber, to remove the hydrogen implanted portion of the barrier metal layer.

    High aspect ratio plasma etch for 3D NAND semiconductor applications
    5.
    发明授权
    High aspect ratio plasma etch for 3D NAND semiconductor applications 有权
    用于3D NAND半导体应用的高纵横比等离子体蚀刻

    公开(公告)号：US09299580B2

    公开(公告)日：2016-03-29

    申请号：US14462817

    申请日：2014-08-19

    Applicant: Applied Materials, Inc.

    Inventor： Byungkook Kong ,  Gene Lee ,  Liming Yang

    IPC: H01L21/20 ,  H01L21/311 ,  H01L27/115

    CPC classification number: H01L21/31116 ,  H01J37/32091 ,  H01J37/32146 ,  H01L21/32137 ,  H01L27/11556 ,  H01L27/11582

    Abstract: Embodiments of the present disclosure provide methods for forming features in a film stack that may be utilized to form stair-like structures with accurate profiles control in manufacturing three dimensional (3D) stacking of semiconductor chips. In one example, a method of etching a material layer disposed on a substrate using synchronized RF pulses includes providing an etching gas mixture into a processing chamber having a film stack disposed on a substrate, synchronously pulsing a RF source power and a RF bias power into the etching gas mixture at a ratio of less than 0.5, and etching the film stack disposed on the substrate.

    Abstract translation: 本公开的实施例提供了用于形成膜堆叠中的特征的方法，其可以用于在制造半导体芯片的三维（3D）堆叠中形成具有精确轮廓控制的阶梯状结构。 在一个示例中，使用同步RF脉冲蚀刻设置在基板上的材料层的方法包括：将蚀刻气体混合物提供到具有设置在基板上的膜堆叠的处理室中，将RF源功率和RF偏置功率同步地脉冲 蚀刻气体混合物的比例小于0.5，并蚀刻设置在基底上的薄膜叠层。

    Spacer patterning process with flat top profile
    6.
    发明授权
    Spacer patterning process with flat top profile 有权

    公开(公告)号：US12211693B2

    公开(公告)日：2025-01-28

    申请号：US17712955

    申请日：2022-04-04

    Applicant: Applied Materials, Inc.

    Inventor： Chao Li ,  Gene Lee

    IPC: H01L21/033 ,  H01L21/311

    Abstract: A method for forming a metal containing feature includes performing a deposition process, the deposition process comprising conformally depositing an over layer on top surfaces of a patterned mandrel layer and over a spacer layer on sidewalls of the patterned mandrel layer, and performing an etch process, the etch process comprising removing the over layer from the top surfaces of the patterned mandrel layer and shoulder portions of the spacer layer, and removing the shoulder portions of the spacer layer, using a fluorine containing etching gas.

    Selective anisotropic metal etch
    7.
    发明授权
    Selective anisotropic metal etch 有权

    公开(公告)号：US11658043B2

    公开(公告)日：2023-05-23

    申请号：US17389119

    申请日：2021-07-29

    Applicant: Applied Materials, Inc.

    Inventor： Jonathan Shaw ,  Priyadarshi Panda ,  Nancy Fung ,  Yongchang Dong ,  Somaye Rasouli ,  Gene Lee

    IPC: H01L21/3213

    CPC classification number: H01L21/32136

    Abstract: A method of patterning a substrate is provided. The method includes modifying a surface of a metal-containing layer formed over a substrate positioned in a processing region of a processing chamber by exposing the surface of the metal-containing layer to plasma effluents of a chlorine-containing gas precursor and an oxygen-containing gas precursor to form a modified surface of the metal-containing layer. The method further includes directing plasma effluents of an inert gas precursor towards the modified surface of the metal-containing layer. The plasma effluents of the inert gas precursor are directed by applying a bias voltage to a substrate support holding the substrate. The method further includes anisotropically etching the modified surface of the metal-containing layer with the plasma effluents of the inert gas precursor to form a first recess having a first sidewall in the metal-containing layer.

    Methods for etching a hardmask layer
    8.
    发明授权
    Methods for etching a hardmask layer 有权

    公开(公告)号：US11127599B2

    公开(公告)日：2021-09-21

    申请号：US16245251

    申请日：2019-01-10

    Applicant: Applied Materials, Inc.

    Inventor： Shan Jiang ,  Gene Lee ,  Akhil Mehrotra ,  Zohreh Hesabi

    IPC: H01L21/311 ,  H01J37/32

    Abstract: Methods for etching a hardmask layer to transfer features into a material layer using an etch process are provided. The methods described herein advantageously facilitate profile and dimension control of features through a proper sidewall and bottom management scheme during the hardmask open process. In one embodiment, a method for etching a hardmask layer to form features in the hardmask layer includes supplying an etching gas mixture onto a substrate to etch an exposed portion of a hardmask layer exposed by a patterned photoresist layer disposed on the substrate, switching the etching gas mixture to a deposition gas mixture comprising a silicon containing gas to form a passivation layer on sidewalls of the hardmask layer and forming openings in the hardmask layer.

    Methods of etching metal-containing layers
    9.
    发明授权
    Methods of etching metal-containing layers 有权

    公开(公告)号：US10957558B2

    公开(公告)日：2021-03-23

    申请号：US16828751

    申请日：2020-03-24

    Applicant: Applied Materials, Inc.

    Inventor： Akhil Mehrotra ,  Gene Lee ,  Abhijit Patil ,  Shan Jiang ,  Zohreh Hesabi

    IPC: H01L21/321 ,  H01L21/3213 ,  H01L21/285 ,  H01L21/3065 ,  H01L21/311

    Abstract: A method of removing a metal-containing layer (e.g., tungsten) from a substrate is provided. The method includes generating a first plasma in a process volume of a plasma chamber when a patterned device is disposed on a substrate support in the process volume. The patterned device includes a patterned region and an unpatterned region; a substrate; a tungsten-containing layer formed over the substrate; a supporting layer disposed between the tungsten-containing layer and the substrate. The patterned region includes exposed surfaces of the supporting layer and the unpatterned region does not include any exposed surfaces of the supporting layer. The method further includes depositing a first film over the patterned region of the tungsten-containing layer with the first plasma; and removing portions of the unpatterned region of the tungsten-containing layer with the first plasma without depositing the first film over the unpatterned region.

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