Invention Grant
- Patent Title: Method for producing polycrystalline silicon
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Application No.: US16340348Application Date: 2017-10-05
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Publication No.: US10995006B2Publication Date: 2021-05-04
- Inventor: Yuichi Inoue , Masami Enokuchi , Kotaro Okamura
- Applicant: TOKUYAMA CORPORATION
- Applicant Address: JP Yamaguchi
- Assignee: TOKUYAMA CORPORATION
- Current Assignee: TOKUYAMA CORPORATION
- Current Assignee Address: JP Yamaguchi
- Agency: Casimir Jones S.C.
- Agent J. Mitchell Jones
- Priority: JPJP2016-201229 20161012
- International Application: PCT/JP2017/036340 WO 20171005
- International Announcement: WO2018/070341 WO 20180419
- Main IPC: C01B33/035
- IPC: C01B33/035 ; C01B3/56 ; B01D53/04 ; C01B33/02 ; C01B3/52
Abstract:
Provided is a method for producing polycrystalline silicon at a lighter environmental load and at low production cost. A method in accordance with the present invention for producing polycrystalline silicon includes: a silicon deposition step; a separation step; a hydrogen chloride removal step; a hydrogen refining step; an activated carbon regeneration step; and a circulation step.
Public/Granted literature
- US20190248658A1 METHOD FOR PRODUCING POLYCRYSTALLINE SILICON Public/Granted day:2019-08-15
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