公开(公告)号：US20250162882A1

公开(公告)日：2025-05-22

申请号：US18840717

申请日：2023-02-10

Applicant: Tokuyama Corporation

Inventor： Yutaka Fukunaga

IPC: C01B32/984

Abstract: Please delete the Abstract in its entirety and substitute therefor the following new A silicon carbide powder contains free carbon in a content of 0.04 mass % or less, in which a ratio of silicon atoms to carbon atoms (Si/C molar ratio) is 1.00 to 1.02. The silicon carbide powder can be produced by a method including a combustion synthesis step of preheating a mixed powder containing a metal silicon powder and a carbon powder having a Si/C molar ratio of 1.00 or more and 1.02 or less at a temperature of 900° C. to 1300° C. under an inert atmosphere, and igniting a part of the mixed powder to perform combustion synthesis to obtain a crude silicon carbide powder; and a heating step of heating the crude silicon carbide powder at a temperature of 2000° C. to 2500° C. under an inert atmosphere. In addition, the silicon carbide powder can also be obtained, without undergoing the heating step, by preheating the mixed powder at a temperature of 900° C. to 1300° C. under an atmospheric pressure and an inert atmosphere, and igniting a part of the mixed powder to perform combustion synthesis.

公开(公告)号：US20250144614A1

公开(公告)日：2025-05-08

申请号：US18849600

申请日：2023-03-28

Applicant: KAKE EDUCATIONAL INSTITUTION ,  TOKUYAMA CORPORATION

Inventor： Hideyuki HIGASHIMURA ,  Md Chanmiya SHEIKH ,  Takenori ISOMURA ,  Masahiro UWAMORI

IPC: B01J41/14 ,  C08F12/32 ,  C08J5/22 ,  C08J9/36

Abstract: To provide an anion exchange resin which has an anion exchange group having high alkali resistance and in which a main chain structure is not affected even if the anion exchange group decomposes. The anion exchange resin according to the present invention is characterized by having an imidazolium group as an anion exchange group in a side chain.

公开(公告)号：US12286541B2

公开(公告)日：2025-04-29

申请号：US16643542

申请日：2018-08-29

Applicant: TOKUYAMA CORPORATION

Inventor： Hiromasa Fujioka ,  Osamu Tanaka ,  Hiroaki Taira ,  Naoki Mikami ,  Toshiaki Ootani

IPC: C01B33/14 ,  C01B33/141 ,  C09C3/08 ,  C09C3/10 ,  H01L23/29

Abstract: This surface-treated sol-gel silica is characterized by containing sol-gel silica having an average particle size of 0.05 μm or more and 2.0 μm or less as measured by laser diffraction scattering and a surface treatment agent on the surface of the sol-gel silica. In a dispersion produced by dispersing 5 mass % of the sol-gel silica in ethanol by emitting ultrasonic waves at 40W for 10 minutes, the content of particles with particle sizes of 5 μm or more is 10 ppm or less in a particle number size distribution obtained by a Coulter counter method.

公开(公告)号：US20250128953A1

公开(公告)日：2025-04-24

申请号：US18834283

申请日：2022-10-28

Applicant: Tokuyama Corporation

Inventor： Junya Sakai ,  Shoji Iiyama ,  Kunihiko Matsumura

IPC: C01B33/107 ,  C23C16/24 ,  C23C16/54

Abstract: [Problem to be solved] Provided is a method that enables effective industrial use of an exhaust gas containing hydrogen to be discharged during production of trichlorosilane.
[Solution] Provided is a method for producing trichlorosilane, the method comprising: reacting metallic silicon and tetrachlorosilane with a mixed gas containing hydrogen to generate trichlorosilane. The mixed gas containing hydrogen contains 1 to 500 molar ppm of hydrogen chloride and 100 to 10,000 molar ppm of silane hydride, and the mixed gas is heated at 100° C. to 450° C. and then reacted.

公开(公告)号：US20250101294A1

公开(公告)日：2025-03-27

申请号：US18730613

申请日：2023-01-13

Applicant: TOKUYAMA CORPORATION

Inventor： Masayuki MIYAZAKI ,  Srinivas VENU ,  Katsuhiro MORI

IPC: C09K9/02 ,  C07C39/42 ,  C07C43/23 ,  C07C217/78 ,  C07C323/21 ,  C07D311/94 ,  C07D317/70 ,  C07D327/04 ,  C07D493/04 ,  C07D497/04 ,  C08K5/1545 ,  C08K5/1565 ,  C08K5/357 ,  C09B57/02 ,  G02B1/04 ,  G02C7/10

Abstract: The purpose of the present invention is to provide: a photochromic compound having an excellent color fading rate and excellent durability; a naphthol derivative that can become an intermediate for the photochromic compound; and a curable composition, an optical article, a lens and eyeglasses each containing the photochromic compound. According to embodiments, a photochromic compound having a backbone represented by formula (1) is provided. In formula (1), M represents C, Si or Ge; R1 represents a haloalkyl group having 1 to 20 carbon atoms inclusive; R2 represents a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms inclusive or a substituted or unsubstituted haloalkyl group having 1 to 20 carbon atoms inclusive.

公开(公告)号：US20250084309A1

公开(公告)日：2025-03-13

申请号：US18707255

申请日：2023-10-02

Applicant: TOKUYAMA CORPORATION

Inventor： Yuzan SUZUKI ,  Yuki KIKKAWA ,  Tomoaki SATO

IPC: C09K13/04 ,  H01L21/3213

Abstract: Provided is a treatment liquid for a semiconductor to be used for removing a transition metal-containing substance on a substrate, the treatment liquid for a semiconductor containing a specific halogen oxyacid ion, at least one ion selected from the group consisting of a bromide ion, a bromite ion, a bromate ion, a chloride ion, a chlorate ion, an iodate ion, an iodide ion, and a triiodide ion, and at least one metal selected from the group consisting of Ca, Na, K, Cr, Ni, and Al, wherein a concentration of any one metal of Ca, Na, K, Cr, Ni, or Al is 0.1 ppt or more and 200 ppt or less.

公开(公告)号：US12054568B2

公开(公告)日：2024-08-06

申请号：US17413841

申请日：2019-12-17

Applicant: TOKUYAMA CORPORATION

Inventor： Ayako Ohara ,  Taichi Hanasaki ,  Junji Takenaka ,  Junji Momoda

IPC: C08F2/46 ,  C08F2/50 ,  C08F20/14 ,  C08F222/10 ,  C08F290/14 ,  C08G61/04 ,  C08K5/3475 ,  C08L75/06 ,  G02B1/111 ,  G02B1/04

CPC classification number: C08F222/1063 ,  C08F2/50 ,  C08F20/14 ,  C08F290/142 ,  C08K5/3475 ,  C08L75/06 ,  G02B1/111 ,  C08F2800/20 ,  G02B1/041

Abstract: The present invention is an optical material composition containing (A) 100 parts by mass of a polymerizable monomer, and (B) 0.001 to 0.3 parts by mass of a UV absorbent having a maximum absorption wavelength of 360 nm or more and less than 380 nm and having a specific structure, and an optical material formed of the composition. According to the present invention, there can be provided an optical material composition containing a UV absorbent and having good long-term storage stability, and an optical material formed of the composition, in particular, an optical material composition capable of forming a plastic lens having a high blue light cut rate.

公开(公告)号：US12024663B2

公开(公告)日：2024-07-02

申请号：US17419058

申请日：2020-02-13

Applicant: TOKUYAMA CORPORATION

Inventor： Yuki Kikkawa ,  Tomoaki Sato ,  Takafumi Shimoda ,  Takayuki Negishi

IPC: C09K13/06 ,  H01L21/304

CPC classification number: C09K13/06 ,  H01L21/304

Abstract: Provided is a treatment liquid for a semiconductor wafer or the like used in a process for forming a semiconductor. Namely a treatment liquid containing (A) a hypochlorite ion, and (B) an alkylammonium salt expressed by the following Formula (1), or the like is provided.




(In the Formula, “a” is an integer from 6 to 20; R1, R2, and R3 are independently, for example, an alkyl group with a carbon number from 1 to 20; and X− is, for example, a chloride ion.).

公开(公告)号：US11998955B2

公开(公告)日：2024-06-04

申请号：US17766651

申请日：2020-09-04

Applicant: TOKUYAMA CORPORATION

Inventor： Junya Sakai ,  Takuya Yokose

IPC: B08B3/04 ,  B08B13/00 ,  C01B33/02 ,  C01B33/021 ,  C01B33/037

CPC classification number: B08B3/04 ,  B08B13/00 ,  C01B33/02 ,  C01B33/021 ,  C01B33/037

Abstract: A device is provided which is capable of evenly etching the entire surface of a silicon core wire. An etching device (1) for a silicon core wire (C1, C2, C3) includes: an etching bath (11, 12) for holding an etching solution (L1, L2); and a plurality of core wire support members (31) for supporting the silicon core wire (C1, C2, C3), the plurality of core wire support members (31) each having a hole (31A) through which the silicon core wire (C1, C2, C3) is to pass; and a position change mechanism (40) for changing a relative position where the silicon core wire (C1, C2, C3) passes through in relation to the hole (31A).

公开(公告)号：US20240158647A1

公开(公告)日：2024-05-16

申请号：US18279710

申请日：2022-03-08

Applicant: TOKUYAMA CORPORATION

Inventor： Taichi HANASAKI ,  Masayuki MIYAZAKI ,  Toshimitsu HIRAREN ,  Katsuhiro MORI ,  Junji MOMODA

IPC: C09D5/29 ,  C08F289/00 ,  C08K5/3435 ,  C09D5/00 ,  C09D7/20 ,  C09D7/47 ,  C09D7/63 ,  C09D151/08 ,  C09D175/04

CPC classification number: C09D5/29 ,  C08F289/00 ,  C08K5/3435 ,  C09D5/002 ,  C09D7/20 ,  C09D7/47 ,  C09D7/63 ,  C09D151/08 ,  C09D175/04 ,  G02C7/102

Abstract: The present invention provides: a photochromic curable composition for providing a cured product having excellent durability and appearance; and a cured product (photochromic laminate) having a particularly favorable appearance. A photochromic curable composition according to an embodiment includes: (A1) a first hindered amine compound having at least one reactive group selected from the group consisting of a radically polymerizable group and a group reactive with a radically polymerizable group; (B) a radically polymerizable monomer comprising a polyrotaxane component (B1) having a radically polymerizable group while not having a piperidyl group; and (C) a photochromic compound.