Invention Grant
- Patent Title: Pressure sensors and method for forming a MEMS pressure sensor
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Application No.: US15976111Application Date: 2018-05-10
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Publication No.: US10996125B2Publication Date: 2021-05-04
- Inventor: Markus Eckinger , Dirk Hammerschmidt , Florian Brandl , Bernhard Winkler
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Design IP
- Priority: DE102017110663.4 20170517,DE102017123431.4 20171009
- Main IPC: G01L9/00
- IPC: G01L9/00 ; B81B3/00 ; B81C3/00

Abstract:
A pressure sensor is provided. The pressure sensor includes at least two electrodes and an integrated circuit configured to sense a capacitance between the at least two electrodes. Further, the pressure sensor includes a Microelectromechanical System (MEMS) structure including a conductive or dielectric membrane configured to move, depending on the pressure, relative to the at least two electrodes.
Public/Granted literature
- US20180335359A1 PRESSURE SENSORS AND METHOD FOR FORMING A MEMS PRESSURE SENSOR Public/Granted day:2018-11-22
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