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公开(公告)号：US10082484B2
公开(公告)日：2018-09-25
申请号：US15247336
申请日：2016-08-25
Applicant: Infineon Technologies AG
Inventor： Werner Breuer , Markus Eckinger
CPC classification number: G01N27/74 , G01N27/72 , G01R33/072
Abstract: A chemically sensitive Hall device is described herein. In accordance with one example of the present invention, a Hall device comprises a substrate and a chemically sensitive layer arranged on the substrate. The chemically sensitive layer is able to interact with atoms or molecules of a gaseous or liquid fluid. Force electrodes are connected to the chemically sensitive layer for feeding a sensor current through the chemically sensitive layer along a first direction. Sense electrodes are connected to the chemically sensitive layer to tap a Hall voltage at the chemically sensitive layer along a second direction. A back gate is arranged on or integrated in the substrate and is isolated from the chemically sensitive layer by an isolation layer.
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公开(公告)号：US09714988B2
公开(公告)日：2017-07-25
申请号：US14514415
申请日：2014-10-15
Applicant: Infineon Technologies AG
Inventor： Markus Eckinger , Stefan Kolb , Alfons Dehe , Guenther Ruhl
CPC classification number: G01R33/072 , G01R33/0052 , H01L27/092 , H01L43/065 , H01L43/14
Abstract: A Hall Effect sensor with a graphene detection layer implemented in a variety of geometries, including the possibility of a so-called “full 3-d” Hall sensor, with the option for integration in a BiCMOS process and a method for producing said Hall Effect sensor is disclosed.
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公开(公告)号：US20170082581A1
公开(公告)日：2017-03-23
申请号：US15247336
申请日：2016-08-25
Applicant: Infineon Technologies AG
Inventor： Werner Breuer , Markus Eckinger
CPC classification number: G01N27/74 , G01N27/72 , G01R33/072
Abstract: A chemically sensitive Hall device is described herein. In accordance with one example of the present invention, a Hall device comprises a substrate and a chemically sensitive layer arranged on the substrate. The chemically sensitive layer is able to interact with atoms or molecules of a gaseous or liquid fluid. Force electrodes are connected to the chemically sensitive layer for feeding a sensor current through the chemically sensitive layer along a first direction. Sense electrodes are connected to the chemically sensitive layer to tap a Hall voltage at the chemically sensitive layer along a second direction. A back gate is arranged on or integrated in the substrate and is isolated from the chemically sensitive layer by an isolation layer.
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公开(公告)号：US09520551B2
公开(公告)日：2016-12-13
申请号：US14933351
申请日：2015-11-05
Applicant: Infineon Technologies AG
Inventor： Stefan Kolb , Markus Eckinger
CPC classification number: H01L43/065 , G01R33/0035 , G01R33/0052 , G01R33/07 , G01R33/075 , H01L27/22 , H01L43/04 , H01L43/14
Abstract: A hall effect device includes an active Hall region in a semiconductor substrate, and at least four terminal structures, each terminal structure including a switchable supply contact element and a sense contact element, wherein each supply contact element includes a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal, wherein the second transistor terminal contacts the active Hall region or extends in the active Hall region; and wherein the sense contact elements are arranged in the active Hall region and neighboring to the switchable supply contact elements.
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公开(公告)号：US20240332283A1
公开(公告)日：2024-10-03
申请号：US18191596
申请日：2023-03-28
Applicant: Infineon Technologies AG
Inventor： Christian Cornelius Russ , Gabriel-Dumitru Cretu , Filippo Magrini , Markus Eckinger , Chi Dong Nguyen
IPC: H01L27/02
CPC classification number: H01L27/0262
Abstract: A silicon controlled rectifier (SCR) includes a first p-well region, a second p-well region, and an n-doped region. The first p-well region is coupled to a first trigger terminal via a first p-doped tap region disposed in the first p-well region. The first p-doped tap region has a higher concentration of a p-type dopant than the first p-well region. The second p-well region is coupled to a second trigger terminal via a second p-doped tap region disposed in the second p-well region. The second p-doped tap region has a higher concentration of a p-type dopant than the second p-well region.
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Patent Agency Ranking
公开(公告)号：US20190025385A1
公开(公告)日：2019-01-24
申请号：US16141394
申请日：2018-09-25
Applicant: Infineon Technologies AG
Inventor： Werner Breuer , Markus Eckinger
Abstract: A chemically sensitive Hall device having a substrate; a chemically sensitive layer arranged on the substrate and configured to operably interact with atoms or molecules of a gaseous or liquid fluid; first electrodes connected to the chemically sensitive layer and configured to feed a sensor current through the chemically sensitive layer along a first direction; and second electrodes connected to the chemically sensitive layer and configured to tap a Hall voltage at the chemically sensitive layer along a second direction.
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公开(公告)号：US09818934B2
公开(公告)日：2017-11-14
申请号：US15349004
申请日：2016-11-11
Applicant: Infineon Technologies AG
Inventor： Stefan Kolb , Markus Eckinger
CPC classification number: H01L43/065 , G01R33/0035 , G01R33/0052 , G01R33/07 , G01R33/075 , H01L27/22 , H01L43/04 , H01L43/14
Abstract: A hall effect device includes an active Hall region in a semiconductor substrate, and at least four terminal structures, each terminal structure including a switchable supply contact element and a sense contact element, wherein each supply contact element includes a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal, wherein the second transistor terminal contacts the active Hall region or extends in the active Hall region; and wherein the sense contact elements are arranged in the active Hall region and neighboring to the switchable supply contact elements.
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公开(公告)号：US20200243507A1
公开(公告)日：2020-07-30
申请号：US16775552
申请日：2020-01-29
Applicant: Infineon Technologies AG
Inventor： Christian Cornelius Russ , Markus Eckinger , Kai Esmark
Abstract: An embodiment of a silicon controlled rectifier (SCR) includes a semiconductor body, an active device region, and a device isolation region configured to electrically insulate the active device region from neighboring active device regions. First SCR regions and a second SCR region of a first conductivity type are in the active device region. A first pn-junction or Schottky junction is formed at an interface between the first SCR regions and the second SCR region. A first plurality of the first SCR regions and sub-regions of the second SCR region are alternately arranged and directly adjoin one another. A second pn-junction is formed at an interface between the second SCR region and a third SCR region of a second conductivity type. A third pn-junction is formed at an interface between the third SCR region and a fourth SCR region of the first conductivity type.
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公开(公告)号：US09978930B2
公开(公告)日：2018-05-22
申请号：US15652579
申请日：2017-07-18
Applicant: Infineon Technologies AG
Inventor： Markus Eckinger , Stefan Kolb
CPC classification number: H01L43/04 , G01R33/0052 , G01R33/07 , H01L43/065 , H01L43/14
Abstract: Methods for doping an active Hall effect region of a Hall effect device in a semiconductor substrate, and Hall effect devices having a doped active Hall effect region are provided. A method includes forming a first doping profile of a first doping type in a first depth region of the active Hall effect region by means of a first implantation with a first implantation energy level, forming a second doping profile of the first doping type in a second depth region of the active Hall effect region by means of a second implantation with a second implantation energy level, and forming an overall doping profile of the active Hall effect region by annealing the semiconductor substrate with the active Hall effect region having the first and the second doping profile.
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公开(公告)号：US20170062704A1
公开(公告)日：2017-03-02
申请号：US15349004
申请日：2016-11-11
Applicant: Infineon Technologies AG
Inventor： Stefan Kolb , Markus Eckinger
CPC classification number: H01L43/065 , G01R33/0035 , G01R33/0052 , G01R33/07 , G01R33/075 , H01L27/22 , H01L43/04 , H01L43/14
Abstract: A hall effect device includes an active Hall region in a semiconductor substrate, and at least four terminal structures, each terminal structure including a switchable supply contact element and a sense contact element, wherein each supply contact element includes a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal, wherein the second transistor terminal contacts the active Hall region or extends in the active Hall region; and wherein the sense contact elements are arranged in the active Hall region and neighboring to the switchable supply contact elements.
Abstract translation: 霍尔效应器件包括半导体衬底中的有源霍尔区域和至少四个端子结构，每个端子结构包括可切换电源接触元件和感测接触元件，其中每个电源接触元件包括具有第一晶体管端子的晶体管元件 ，第二晶体管端子和控制端子，其中第二晶体管端子接触有源霍尔区域或在有源霍尔区域中延伸; 并且其中所述感测接触元件布置在所述有源霍尔区域中并且与所述可切换电源接触元件相邻。
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