Invention Grant
- Patent Title: Microelectronic devices having vertical piezoelectric membranes for integrated RF filters
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Application No.: US16346099Application Date: 2016-12-22
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Publication No.: US11005447B2Publication Date: 2021-05-11
- Inventor: Paul B. Fischer , Marko Radosavljevic , Sansaptak Dasgupta , Han Wui Then
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt P.C.
- International Application: PCT/US2016/068352 WO 20161222
- International Announcement: WO2018/118069 WO 20180628
- Main IPC: H03H9/17
- IPC: H03H9/17 ; H03H3/04 ; H03H3/02

Abstract:
Embodiments of the invention include microelectronic devices, resonators, and methods of fabricating the microelectronic devices. In one embodiment, a microelectronic device includes a substrate and a plurality of cavities integrated with the substrate. A plurality of vertically oriented resonators are formed with each resonator being positioned in a cavity. Each resonator includes a crystalline or single crystal piezoelectric film.
Public/Granted literature
- US20190260342A1 MICROELECTRONIC DEVICES HAVING VERTICAL PIEZOELECTRIC MEMBRANES FOR INTEGRATED RF FILTERS Public/Granted day:2019-08-22
Information query
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