Invention Grant
- Patent Title: Cold area determining method, memory controlling circuit unit and memory storage device
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Application No.: US16592780Application Date: 2019-10-04
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Publication No.: US11010291B2Publication Date: 2021-05-18
- Inventor: Shao-Fan Yen , Chih-Chieh Hsu
- Applicant: PHISON ELECTRONICS CORP.
- Applicant Address: TW Miaoli
- Assignee: PHISON ELECTRONICS CORP.
- Current Assignee: PHISON ELECTRONICS CORP.
- Current Assignee Address: TW Miaoli
- Agency: JCIPRNET
- Priority: TW108130145 20190823
- Main IPC: G06F12/02
- IPC: G06F12/02

Abstract:
A cold area determining method, a memory controlling circuit unit, and a memory storage device are provided. The method includes: recording a plurality of logical update counts respectively corresponding to a plurality of logical units; calculating a plurality of reference update counts respectively corresponding to the plurality of physical erasing units according to the plurality of logical update counts; calculating a reference value according to a plurality of first logical update counts respectively corresponding to a plurality of first logical units; and determining at least one first physical erasing unit belonging to a cold area among the plurality of physical erasing units according to the reference value and the plurality of reference update counts.
Public/Granted literature
- US20210056018A1 COLD AREA DETERMINING METHOD, MEMORY CONTROLLING CIRCUIT UNIT AND MEMORY STORAGE DEVICE Public/Granted day:2021-02-25
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