Invention Grant
- Patent Title: Methods of forming semiconductor structures
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Application No.: US16121928Application Date: 2018-09-05
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Publication No.: US11018229B2Publication Date: 2021-05-25
- Inventor: Michael Mutch , Manuj Nahar
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L29/161
- IPC: H01L29/161 ; H01L29/04 ; H01L29/786 ; H01L21/02 ; C30B25/18 ; H01L27/105
Abstract:
A method of forming a semiconductor structure includes forming a first material over a base material by vapor phase epitaxy. The first material has a crystalline portion and an amorphous portion. The amorphous portion of the first material is removed by abrasive planarization. At least a second material is formed by vapor phase epitaxy over the crystalline portion of first material. The second material has a crystalline portion and an amorphous portion. The amorphous portion of the second material is removed by abrasive planarization. A semiconductor structure formed by such a method includes the substrate, the first material, the second material, and optionally, an oxide material between the first material and the second material. The substrate, the first material, and the second material define a continuous crystalline structure. Semiconductor structures, memory devices, and systems are also disclosed.
Public/Granted literature
- US20200075732A1 METHODS OF FORMING SEMICONDUCTOR STRUCTURES Public/Granted day:2020-03-05
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