Invention Grant
- Patent Title: Photosensitive middle layer
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Application No.: US16119880Application Date: 2018-08-31
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Publication No.: US11022885B2Publication Date: 2021-06-01
- Inventor: Chun-Chih Ho , Kuan-Hsin Lo , Ching-Yu Chang , Chin-Hsiang Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F7/004
- IPC: G03F7/004 ; G03F7/038 ; G03F7/039 ; G03F7/075 ; G03F7/11 ; G03F7/16 ; G03F7/20 ; G03F7/32

Abstract:
A method includes providing a substrate; forming a bottom layer over the substrate; forming a middle layer over the bottom layer, a top surface of which including a photosensitive moiety having a first end anchored in the middle layer and a second end extending away from the top surface of the middle layer; forming a photoresist layer over the middle layer; exposing the photoresist layer to a radiation source; and developing the photoresist layer to form a pattern. The photosensitive moiety, which includes one of a photo-acid generator (PAG), a photo-base generator (PBG), photo-decomposable base (PDB), or photo-decomposable quencher (PDQ), may be anchored to a polymer backbone forming the middle layer via one or more linker groups. A distance by which the photosensitive moiety extends into the photoresist layer may be determined by a length of the linker group.
Public/Granted literature
- US20200073243A1 Photosensitive Middle Layer Public/Granted day:2020-03-05
Information query
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