Invention Grant
- Patent Title: Gate all-around device
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Application No.: US16818259Application Date: 2020-03-13
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Publication No.: US11024746B2Publication Date: 2021-06-01
- Inventor: Russell Chin Yee Teo , Benjamin Colombeau
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/06 ; H01L29/06 ; H01L29/423 ; H01L29/49 ; H01L29/66 ; H01L21/02 ; H01L21/28 ; H01L21/822
Abstract:
Gate all-around devices are disclosed in which an angled channel comprising a semiconducting nanostructure is located between a source and a drain. The angled channel has an axis that is oriented at an angle to the top surface of the substrate at an angle in a range of about 1° to less than about 90°. The gate all-around device is intended to meet design and performance criteria for the 7 nm technology generation.
Public/Granted literature
- US20200220026A1 Gate All-Around Device Public/Granted day:2020-07-09
Information query
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