Invention Grant
- Patent Title: Seminconductor chip having internal terrace-like steps and method for producing a semiconductor chip
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Application No.: US16624312Application Date: 2018-05-17
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Publication No.: US11031526B2Publication Date: 2021-06-08
- Inventor: Alexander Tonkikh
- Applicant: OSRAM OLED GmbH
- Applicant Address: DE Regensburg
- Assignee: OSRAM OLED GmbH
- Current Assignee: OSRAM OLED GmbH
- Current Assignee Address: DE Regensburg
- Agency: Viering, Jentschura & Partner MBB
- Priority: DE102017113383.6 20170619
- International Application: PCT/EP2018/062978 WO 20180517
- International Announcement: WO2018/233950 WO 20181227
- Main IPC: H01L33/20
- IPC: H01L33/20 ; H01L33/00 ; H01L33/16 ; H01L33/30 ; H01L33/38

Abstract:
A semiconductor chip may include a semiconductor body, a current spreading layer, and a contact structure. The semiconductor body may include a first semiconductor layer, a second semiconductor layer, and an intervening active layer, and a current spreading layer arranged in a vertical direction between the contact structure and the semiconductor body. The semiconductor boy has a plurality of internal step configured in a terrace-like manner where the contact structure may include a plurality of conductor tracks arranged with regard to the lateral orientations of the internal step in such a way that current spreading along the internal steps is promoted vis-à-vis current spreading transversely with respect to the internal steps. A method for producing the semiconductor chip is also included.
Public/Granted literature
- US20200168764A1 SEMINCONDUCTOR CHIP HAVING INTERNAL TERRACE-LIKE STEPS AND METHOD FOR PRODUCING A SEMICONDUCTOR CHIP Public/Granted day:2020-05-28
Information query
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