Invention Grant
- Patent Title: Memory control method, memory storage device and memory control circuit unit to determine a source block using interleaving information
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Application No.: US16431672Application Date: 2019-06-04
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Publication No.: US11036429B2Publication Date: 2021-06-15
- Inventor: Che-Yueh Kuo , Wei-Jeng Wang
- Applicant: PHISON ELECTRONICS CORP.
- Applicant Address: TW Miaoli
- Assignee: PHISON ELECTRONICS CORP.
- Current Assignee: PHISON ELECTRONICS CORP.
- Current Assignee Address: TW Miaoli
- Agency: JCIPRNET
- Priority: TW108111597 20190402
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G06F12/06

Abstract:
A memory control method for a rewritable non-volatile memory module is provided according to an exemplary embodiment of the disclosure. The memory control method includes: determining a first management unit as a source block and reading valid data from a first continuous data unit in the first management unit according to first interleaving information and second interleaving information, wherein the first interleaving information reflects a total number of the first continuous data units in the first management unit, and the second interleaving information reflects a total number of second continuous data units in a second management unit; storing the valid data into a recycling block; and erasing the first management unit.
Public/Granted literature
- US20200319822A1 MEMORY CONTROL METHOD, MEMORY STORAGE DEVICE AND MEMORY CONTROL CIRCUIT UNIT Public/Granted day:2020-10-08
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