Invention Grant
- Patent Title: Spin orbit torque memory devices and methods of fabrication
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Application No.: US16246358Application Date: 2019-01-11
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Publication No.: US11062752B2Publication Date: 2021-07-13
- Inventor: Tofizur Rahman , James Pellegren , Angeline Smith , Christopher Wiegand , Noriyuki Sato , Tanay Gosavi , Sasikanth Manipatruni , Kaan Oguz , Kevin O'Brien , Benjamin Buford , Ian Young
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Green, Howard, & Mughal LLP
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H01L43/10 ; H01L27/22 ; H01L43/12 ; H01L43/02 ; H01L43/08
Abstract:
A perpendicular spin orbit torque memory device includes a first electrode having tungsten and at least one of nitrogen or oxygen and a material layer stack on a portion of the first electrode. The material layer stack includes a free magnet, a fixed magnet above the first magnet, a tunnel barrier between the free magnet and the fixed magnet and a second electrode coupled with the fixed magnet.
Public/Granted literature
- US20200227104A1 SPIN ORBIT TORQUE MEMORY DEVICES AND METHODS OF FABRICATION Public/Granted day:2020-07-16
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