Interconnect fabricated with flowable copper
Abstract:
An integrated circuit includes a base with one or more semiconductor devices. An insulating material is over the base and an interconnect structure is over the base. The interconnect structure includes vertical conductors extending through the insulating material in a spaced-apart arrangement. The interconnect structure comprises a conductor and a chalcogen, the chalcogen present in an amount of up to 5 atomic percent. In some embodiments, the chalcogen is present in an amount less than 2 atomic percent or less than 1 atomic percent.
Public/Granted literature
Information query
Patent Agency Ranking
0/0