Invention Grant
- Patent Title: Interconnect fabricated with flowable copper
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Application No.: US16597172Application Date: 2019-10-09
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Publication No.: US11062995B2Publication Date: 2021-07-13
- Inventor: Carl H. Naylor , Mauro J. Kobrinsky
- Applicant: INTEL CORPORATION
- Applicant Address: US CA Santa Clara
- Assignee: INTEL CORPORATION
- Current Assignee: INTEL CORPORATION
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt P.C.
- Main IPC: H01L23/532
- IPC: H01L23/532 ; H01L23/522 ; H01L23/528 ; H01L21/02 ; H01L21/768 ; H01L27/088 ; H01L23/535

Abstract:
An integrated circuit includes a base with one or more semiconductor devices. An insulating material is over the base and an interconnect structure is over the base. The interconnect structure includes vertical conductors extending through the insulating material in a spaced-apart arrangement. The interconnect structure comprises a conductor and a chalcogen, the chalcogen present in an amount of up to 5 atomic percent. In some embodiments, the chalcogen is present in an amount less than 2 atomic percent or less than 1 atomic percent.
Public/Granted literature
- US20210111129A1 INTERCONNECT FABRICATED WITH FLOWABLE COPPER Public/Granted day:2021-04-15
Information query
IPC分类: