Invention Grant
- Patent Title: Oxide semiconductor compound, semiconductor element provided with layer of oxide semiconductor compound, and laminated body
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Application No.: US16117761Application Date: 2018-08-30
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Publication No.: US11075303B2Publication Date: 2021-07-27
- Inventor: Hideo Hosono , Toshio Kamiya , Hideya Kumomi , Junghwan Kim , Nobuhiro Nakamura , Satoru Watanabe , Naomichi Miyakawa
- Applicant: TOKYO INSTITUTE OF TECHNOLOGY , AGC Inc.
- Applicant Address: JP Meguro-ku; JP Chiyoda-ku
- Assignee: TOKYO INSTITUTE OF TECHNOLOGY,AGC Inc.
- Current Assignee: TOKYO INSTITUTE OF TECHNOLOGY,AGC Inc.
- Current Assignee Address: JP Meguro-ku; JP Chiyoda-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JPJP2016-040498 20160302
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L51/50 ; C23C14/08 ; C23C14/34 ; C23C14/28 ; C23C14/58 ; H01B5/14 ; H01L23/31 ; H01L23/532 ; H01L29/417 ; H01L29/423 ; H01L31/04
Abstract:
An oxide semiconductor compound includes gallium; and oxygen. An optical band gap is 3.4 eV or more. An electron Hall mobility obtained by performing a Hall measurement at a temperature of 300 K is 3 cm2/Vs or more.
Public/Granted literature
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