Invention Grant
- Patent Title: Precursors for the atomic layer deposition of transition metals and methods of use
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Application No.: US15947697Application Date: 2018-04-06
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Publication No.: US11078224B2Publication Date: 2021-08-03
- Inventor: Jeffrey W. Anthis , Atashi Basu
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: C23C16/18
- IPC: C23C16/18 ; C07F15/06 ; C07F13/00 ; C07F15/00 ; C23C16/455 ; C07F15/04 ; C07F15/02 ; C07F7/08

Abstract:
Metal coordination complexes comprising at least one diazabutadiene based ligand having a structure represented by: where A1, A2, A3, and A4 are atoms in a 6-membered ring and are independently selected from C, N, O, S, and P; and where R1, R2, R3, R4, R5, and R6 are independently selected from the group consisting of H, amino groups, C1-C6 alkyl groups, or C4-10 cycloalkyl groups; and further provided that alkyl groups may optionally contain silicon; and where the metal coordination complex is capable of participating in a Diels-Alder type reaction with a dienophile. Processing methods using the metal coordination complexes are also described.
Public/Granted literature
- US20180291051A1 PRECURSORS FOR THE ATOMIC LAYER DEPOSITION OF TRANSITION METALS AND METHODS OF USE Public/Granted day:2018-10-11
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