A method for diagnosing memory, performed by a storage system, is provided. The method includes writing and reading through a communication channel to and from flash memory of each of a plurality of flash memory devices and a static random-access memory (SRAM) register of each of the plurality of flash memory devices. The method includes analyzing errors in read data from the reading through the communication channel, identifying types of errors among flash memory errors, SRAM register errors, and communication channel errors, based on the analyzing, and indicating at least one error and type of error from the read data.