- Patent Title: Method of forming oxide film including two non-oxygen elements, method of manufacturing semiconductor device, method of forming dielectric film, and semiconductor device
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Application No.: US16791189Application Date: 2020-02-14
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Publication No.: US11081338B2Publication Date: 2021-08-03
- Inventor: Younsoo Kim , Haeryong Kim , Seungmin Ryu , Sunmin Moon , Jeonggyu Song , Changsu Woo , Kyooho Jung , Younjoung Cho
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2019-0091159 20190726
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
A method of forming an oxide film including two non-oxygen elements includes providing a first source material on a substrate, the first source material including a first central element, providing an electron donor compound to be bonded to the first source material, providing a second source material on the substrate after the providing of the electron donor compound, the second source material including a second central element, and providing an oxidant on the substrate.
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