An IGBT module with a heat dissipation structure includes a first layer of chips, a second layer of chips, a first bonding layer, a second bonding layer, a first copper layer, a second copper layer, a first polymer composite layer, a second polymer composite layer, a first ceramic layer, a second ceramic layer, and a heat dissipation layer. The first ceramic layer is partially formed on the heat dissipation layer and corresponds in position and in area to the first layer of chips, and the second ceramic layer is partially formed on the heat dissipation layer and corresponds in position and in area to the second layer of chips.